www.lansdale.com page 1 of 9 issue a ml12002 analog mixer legacy device: motorola mc12002 the ml12002 is a double balanced analog mixer, includ- ing an input amplifier feeding the mixer carrier port and a temperature compensated bias regulator. the input circuits for both the amplifier and mixer are differential amplifier circuits. the on-chip regulator provides all of the required biasing. this circuit is designed for use as a balanced mixer in high-frequency wide-band circuits. other typical applica- tions include suppressed carrier and amplitude modulation, synchronous am detection, fm detection, phase detection, and frequency doubling, at frequencies up to uhf. there are two package offerings: ? plastic dual inline 14 lead, p dip. ? plastic surface mount 14 lead soic. ? operating temperature range: t a = ?0 to +85? p dip 14 = cp plastic package case 646 14 1 sog 14 = -5p sog case 751a cross reference/ordering information motorola p dip 14 MC12002P ml12002cp sog 14 mc12002d ml12002-5p lansdale package note : lansdale lead free ( pb ) product, as it becomes available, will be identified by a part number prefix change from ml to mle . (top view) pin connections 1 2 3 4 5 6 78 9 10 11 12 13 14 v cc re s i s tor lo a d d a t a o u tp u t d a t a o u tp u t reg u l a tor byp ass mixer sign a l inp u t mixer sign a l inp u t reg u l a tor byp ass loc a l o s cill a tor inp u t loc a l o s cill a tor inp u t altern a te sign a l inp u t n u ll adj us t n u ll adj us t v ee figure 1. logic diagram 2 3 8 9 loc a l o s cill a tor inp u t s sign a l inp u t s amplifier v b v r bi as reg u l a tor c a rrier port mixer sign a l port v r v b 12 11 o u tp u t
lan s dale s emiconductor, inc. ml12002 www.lansdale.com page 2 of 9 issue a test voltage values volts v ihmax v ilmin v cc electrical characteristics +2.9 +2.0 +5.0 test limits voltage applied to pins listed below pin under ?0 c +25 c +85 c characteristic symbol under test min max min max min max unit v ihmax v ilmin v cc gnd power s u pply dr a in i cc 14 16 madc 11,12,14 5,6,7 inp u t c u rrent i inh 2 3 8 9 0.75 0.75 0.75 0.75 madc madc madc madc 2 3 8 9 11,12,14 11,12,14 11,12,14 11,12,14 5,6,7 5,6,7 5,6,7 5,6,7 i inl 2 3 8 9 ?0.7 ?0.7 ?0.7 ?0.7 madc madc madc madc 2 3 8 9 11,12,14 11,12,14 11,12,14 11,12,14 5,6,7 5,6,7 5,6,7 5,6,7 o u tp u t c u rrent io 1 11 12 0.7 0.7 1.3 1.3 madc madc 11,12,14 11,12,14 7 7 io 2 11 12 2.1 2.1 3.9 3.9 madc madc 11,12,14 11,12,14 5,6,7 5,6,7 i o u t 11 11 12 12 4.2 4.2 4.2 4.2 7.8 7.8 7.8 7.8 madc madc madc madc 2,9 3,8 2,8 3,9 11,12,14 11,12,14 11,12,14 11,12,14 5,6,7 5,6,7 5,6,7 5,6,7 differenti a l c u rrent ? io 1 ? io 2 11,12 11,12 ?00 ?00 +100 +200 ?00 ?00 +100 +200 ?00 ?00 +100 +200 adc adc 11,12,14 11,12,14 7 5,6,7 bi as volt a ge v bi as 1 4 5 6 10 2.33 390 275 275 1.26 2.53 590 415 415 1.46 2.32 400 285 285 1.185 2.52 600 425 425 1.385 2.3 410 295 295 1.105 2.5 610 435 435 1.305 vdc mvdc mvdc mvdc vdc 11,12,14 11,12,14 11,12,14 11,12,14 11,12,14 5,6,7 5,6,7 7 7 5,6,7 pulse in pulse out ?.0 v gnd v ee ac g a in (see fig u re 1) a v 11 5.0 v/v 2 11 9 14 7 (freq u ency = 100 mhz) *note 11 0.28 v/v 8 11 3 14 7 note: *note: ac g a in i s a f u nction of collector lo a d imped a nce.
lan s dale s emiconductor, inc. ml12002 www.lansdale.com page 3 of 9 issue a
lan s dale s emiconductor, inc. ml12002 www.lansdale.com page 4 of 9 issue a all inp u t a nd o u tp u t c a ble s to the s cope a re eq ua l length s of 50-ohm co a xi a l c a ble. note s : te s t 1 adj us t potentiometer for c a rrier n u ll a t f c = 100 khz. te s t 2 connect pin s 5 a nd 6 to gnd. s a mpling volt meter hewlett p a ck a rd 3406a or eq u iv. tektronix 454 a nd 568 o s cillo s cope s hewlett p a ck a rd 651a a nd 3300b 100 khz to 100 mhz @ 30 mvpp sign a l a inp u t (pin 2) o u tp u t (pin12) o u tp u t (pin 11) sign a l b inp u t (pin 8) o u tp u t (pin 12) o u tp u t (pin 11) figure 4. carrier feedthrough test circuits 12 11 o u tp u t s n u ll adj us t v cc 6 14 5 7 1 10 v ee reg. byp ass loc a l o s cill a tor inp u t s 2 3 8 9 mixer inp u t s 1.0 f 1.0 f 1.0 f 0.1 f 0.1 f 50 +5.0 v 0.1 f 133 133
lan s dale s emiconductor, inc. ml12002 www.lansdale.com page 5 of 9 issue a 1.0 k 100.0 10.0 1.0 0.1 ?0 f c , carrier frequency (mhz) +40 +30 +20 +10 0 ?0 ?0 ?0 ?0 ?0 f c , carrier frequency (mhz) 1.0 k 100.0 10.0 +40 +30 +20 +10 0 ?0 ?0 ?0 ?0 ?0 ?0 0.1 1.0 f c , carrier frequency (mhz) 10.0 100.0 1.0 100.0 10.0 1.0 0.1 0.0 1.0 2.0 3.0 4.0 0.1 f c , carrier frequency (mhz) 5.0 4.0 3.0 2.0 0.0 5.0 1.0 ) ] s m r [ v m ( e g a t l o v t u p t u o r e i r r a c , v t f c ) ] s m r [ v m ( e g a t l o v t u p t u o r e i r r a c , v t f c ) b d ( n o i s s e r p p u s r e i r r a c ) b d ( n o i s s e r p p u s r e i r r a c ?5.0 v all inp u t a nd o u tp u t c a ble s to the s cope a re eq ua l length s of 50-ohm co a xi a l c a ble. x 50 atten. 50 50 50 50 11 12 o u tp u t s v ee v cc n u ll adj us t reg. byp ass mixer inp u t s loc a l o s cill a tor inp u t s 1.0 f + ?5.0 v 50 14 6 5 7 10 1 hewlett p a ck a rd tee 11536a hewlett p a ck a rd 3406a s a mpling voltmeter hewlett p a ck a rd 651a 10 khz @ 150 mv r.m.s. hewlett p a ck a rd 651a a nd 3300b 100 khz to 400 mhz @ 30 mv rms. 9 1.0 f 0.1 f 50 2 3 0.1 f 1.0 f 8 1.0 f note s : te s t 1 adj us t potentiometer for c a rrier n u ll @ f c = 100 khz te s t 2 connect pin s 5 a nd 6 to 5.0 volt s te s t 3 adj us t potentiometer for c a rrier n u ll @ 25 c figure 5. carrier feedthrough versus frequency (te s t 1) figure 6. carrier feedthrough versus frequency (te s t 2) figure 7. carrier suppression test circuit figure 8. carrier suppression versus frequency (te s t 1) figure 9. carrier suppression versus frequency (te s t 2)
lan s dale s emiconductor, inc. ml12002 www.lansdale.com page 6 of 9 issue a note s : te s t 1 pin s 5 a nd 6 left open te s t 2 pin s 5 a nd 6 a re tied to ?.0 volt s t a , ambient temperature ( c) +125 +100 +75 +50 +25 0 ?5 ?5 ?0 ?0 ?0 ?0 ?0 ?0 fc = 10 mhz @ 30 mv rm s f s = 10 khz @ 150 mv rm s ) b d ( n o i s s e r p p u s r e i r r a c loc a l o s cill a tor inp u t s 3 2 1.0 f 1.0 f 1.0 f mixer inp u t s reg. byp ass 1.0 f 8 9 0.1 f 10 1 v ee 0.1 f ?.0 v 0.1 f 7 i oo = i 11 ?i 12 14 v cc 56 o u tp u t s 12 i 12 a i 11 11 a n u ll adj us t i i test 1 t a , ambient temperature ( c) +125 +100 +75 +50 +25 0 ?5 ?5 ?00 ?0 0.0 +50 +100 test 2 ) a ( t n e r r u c t e s f f o t u p t u o , i o o 1 6 21 26 16 31 1000 800 600 f, frequency (mhz) 400 200 50 100 150 200 250 300 350 400 11 ) s m h o ( e c n a t s i s e r r l c r z in r(ohms) ) f p ( e c n a t i c a p a c , c typical input impedance v s frequency r ?local oscillator and signal inputs c figure 10. carrier suppression versus temperature figure 11a. output offset current (i 00 ) versus temperature figure 12. output offset current versus temperature figure 13. typical input impedance versus frequency (no circ u it)
lan s dale s emiconductor, inc. ml12002 www.lansdale.com page 7 of 9 issue a rf out rf input agc mod input +v v2 5v r3 10k 40% c8 .1uf p3 p2 p1 c7 1uf c6 1nf c5 1nf c4 1nf c3 1nf c2 1nf c1 1nf +v v1 5v ml12002 byp p1 loin p2 loin p3 altin p4 null p5 null p6 gnd p7 sigin p8 sigin p9 byp p10 rfout p11 rfout p12 load p13 vcc p14 u1 r4 1k r2 50 r1 50 figure 11b. application circuite using ml12002 as a am modulator
lan s dale s emiconductor, inc. ml12002 www.lansdale.com page 8 of 9 issue a p dip 14 = cp plastic package (ml12002cp) case 646?6 issue m 17 14 8 b a dim min max min max millimeters inches a 0.715 0.770 18.16 18.80 b 0.240 0.260 6.10 6.60 c 0.145 0.185 3.69 4.69 d 0.015 0.021 0.38 0.53 f 0.040 0.070 1.02 1.78 g 0.100 bsc 2.54 bsc h 0.052 0.095 1.32 2.41 j 0.008 0.015 0.20 0.38 k 0.115 0.135 2.92 3.43 l m 10 10 n 0.015 0.039 0.38 1.01 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension l to center of leads when formed parallel. 4. dimension b does not include mold flash. 5. rounded corners optional. f hg d k c seating plane n ? 14 pl m 0.13 (0.005) l m j 0.290 0.310 7.37 7.87 outline dimensions
lan s dale s emiconductor, inc. ml12002 www.lansdale.com page 9 of 9 issue a s og 14 = -5p (ml12002-5p) ca s e 751a-0 3 -a- -b- p 7 pl g c k s eat- ing plane m j r x 45 1 7 8 14 t f notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982 2. controlling dimension: millimeter 3. dimensions a and b do not include mold protrusion 4. maximum hold protrusion 0.15 (0.006) per side 5. dimension d does not include dambar protrusion allowable dambar protrusion shall be 0.127 (0.005) total in excess of the d dimension at maximum material condition dim inches millimeters min max min max a 8.55 8.75 0.337 0.334 b 3.80 4.00 0.150 0.157 c 1.35 1.75 0.054 0.068 d 0.35 0.49 0.014 0.019 f 0.40 1.25 0.016 g 1.27 bsc 0.050 bsc 0.049 j 0.19 0.25 0.008 0.009 k 0.10 0.25 0.004 0.009 p 5.80 6.20 0.228 0.244 r 0.25 0.50 0.010 0.019 m 0 7 0 7 0.25 (0.010) b m 0.25 (0.010) b a m ss m outline dimensions lansdale s emiconductor reserves the right to make changes without further notice to any products herein to improve relia b ili- ty, function or design. lansdale does not assume any lia b ility arising out of the application or use of any product or circuit descri b ed herein; neither does it convey any license under its patent rights nor the rights of others. ?ypical parameters which may b e provided in lansdale data sheets and/or specifications can vary in different applications, and actual performance may vary over time. all operating parameters, including ?ypicals must b e validated for each customer application b y the customer s technical experts. lansdale s emiconductor is a registered trademark of lansdale s emiconductor, inc.
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